参数项参数值
参数项参数值
Gate-Emitter Leakage Current100 nA
Collector- Emitter Voltage VCEO Max1.7 kV
Continuous Collector Current75 A
ConfigurationSingle
TechnologySi
Maximum Gate Emitter Voltage20 V
Collector-Emitter Saturation Voltage2.5 V
Width14 mm
Height5.1 mm
Length16.05 mm
MXHTS85412999
KRHTS8541299000
JPHTS8541290100
Package / CaseTO-268-3
Mounting StyleSMD/SMT
CAHTS8541290000
Minimum Operating Temperature- 55 C
PackagingTube
Maximum Operating Temperature+ 150 C
Factory Pack Quantity30
CNHTS8541290000
DescriptionIGBT Transistors 72 Amps 1700 V 3.3 V Rds
BrandIXYS
ImageIXYS IXGT32N170
SeriesIXGT32N170
Product TypeIGBT Transistors
TARIC8541290000
ManufacturerIXYS
Product CategoryIGBT Transistors
RoHS Details
Unit Weight0.158733 oz
SubcategoryIGBTs
Continuous Collector Current at 25 C75 A
Pd - Power Dissipation350 W
Continuous Collector Current Ic Max200 A
USHTS8541290095