参数项参数值
参数项参数值
ConfigurationSingle
Transistor PolarityN-Channel
Id - Continuous Drain Current760 mA
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Rds On - Drain-Source Resistance990 mOhms
Transistor Type1 N-Channel
Vgs - Gate-Source Voltage- 12 V, + 12 V
Mounting StyleSMD/SMT
Typical Turn-On Delay Time3.5 ns
Minimum Operating Temperature- 55 C
Package / CaseX1-DFN1006-3
Maximum Operating Temperature+ 150 C
Qg - Gate Charge0.93 nC
BrandDiodes Incorporated
Factory Pack Quantity3000
ImageDiodes Incorporated DMN21D2UFB-7
TARIC8541290000
SubcategoryMOSFETs
ManufacturerDiodes Incorporated
Product TypeMOSFET
Channel ModeEnhancement
DescriptionMOSFET MOSFET BVDSS: 8V 24V X1-DFN1006-3 T&R 3K
Product CategoryMOSFET
USHTS8542390001
Fall Time9.8 ns
Pd - Power Dissipation0.38 W
Vds - Drain-Source Breakdown Voltage20 V
Number of Channels1 Channel
Rise Time4.2 ns